14 ESJC60S12 gete electronic co.,ltd n e-mail: tel: 0086-20-8184 9628 n f a x : 0086-20-8184 9638 n www.hvgtsemi.com 01 guangzhou * china www.getedz.com sales@getedz.com china tel: 4001 83 84 85 do-722 series lead diameter 1.2mm 22mm 7.5mm 24mm 600ma 12kv -high voltage power diodes features high speed switching high surge resisitivity for crt discharge high reliability design avalanche characteristic applications maximum ratings and characteristics absolute maximum ratings high reliability resin molded type high voltage mesa type silicon chip by epoxy resin. x light power supply laser voltage doubler circuit microwave emission power general purpose high voltage rectifier, voltage multiplier assembly. epoxy resin molded in vacuum, have anticorrosion in the surface diode in small size package which is sealed a multilayed ESJC60S12 outline drawings : hvgt items repetitive peak renerse voltage average output current suege current junction temperature allowable operation case temperature symbols v rrm i o i fsm t j tc condition ta=25c,resistive load 0.6 125 125 -40 to +125 units kv a a peak c c c storage temperature t stg ESJC60S12 12 peak ta=25c,8.3msec, half sine ta=25c, i =0.1ma r maximum reverse recovery time trr at 25c; electrical characteristics (ta=25c unless otherwise specified ) items maximum forward voltage drop maximum reverse current symbols v f ir 1 ir 2 conditions at 25c,v r at 100c,v units v ua ua junction capacitance cj at 25c; v r =0v,f=1mhz -- ESJC60S12 50 5.0 pf =v rrm r =v rrm -- ns at 25c, f 30 i =0.5i ; f i =i (av); r i =0.25i rr r r f at: i
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